The latest generation of Rudolph's Focused Beam™ laser ellipsometry technology, the ultra-II™ is designed to deliver the superior measurement accuracy, repeatability, and tool-to-tool matching required for process control measurements in semiconductor manufacturing for the 90 nm, 65 nm, and 45 nm technology nodes and for 193 nm lithography. The MAControl™ option provides a unique solution for eliminating the effects of molecular airborne contaminants on ultrathin oxide films, providing unparalleled measurement repeatability and long-term reproducibility. DUV reflectometer improvements provide industry-leading performance on many advanced applications including nitrided gates, 193 nm ARCs, and low-k integration silicon nitride and silicon carbide films.